Geometry optimization for carbon nanotube transistors
نویسندگان
چکیده
The performance of carbon nanotube-based transistors is analyzed numerically, employing the non-equilibrium Green’s function formalism. The effect of geometrical parameters on the device performance is investigated. Our results clearly show that device characteristics can be optimized by appropriately selecting geometrical parameters. 2007 Elsevier Ltd. All rights reserved.
منابع مشابه
Application of Neural Space Mapping for Modeling Ballistic Carbon Nanotube Transistors
In this paper, using the neural space mapping (NSM) concept, we present a SPICE-compatible modeling technique to modify the conventional MOSFET equations, to be suitable for ballistic carbon nanotube transistors (CNTTs). We used the NSM concept in order to correct conventional MOSFET equations so that they could be used for carbon nanotube transistors. To demonstrate the accuracy of our mod...
متن کاملBallistic (n,0) Carbon Nanotube Field Effect Transistors' I-V Characteristics: A Comparison of n=3a+1 and n=3a+2
Due to emergence of serious obstacles by scaling of the transistors dimensions, it has been obviously proved that silicon technology should be replaced by a new one having a high ability to overcome the barriers of scaling to nanometer regime. Among various candidates, carbon nanotube (CNT) field effect transistors are introduced as the most promising devices for substituting the silicon-based ...
متن کاملAutomated probe microscopy via evolutionary optimization at the atomic scale
We use numerical simulations to investigate the effect of electrostatics on the source and drain contacts of carbon nanotube field‐effect transistors. We find that unscreened charge on the nanotube at the contact‐channel interface leads to a potential barrier that can significantly hamper transport through the device. This effect is largest for intermediate gate voltages and for contacts near t...
متن کاملPerformance Analysis of Reversible Sequential Circuits Based on Carbon NanoTube Field Effect Transistors (CNTFETs)
This study presents the importance of reversible logic in designing of high performance and low power consumption digital circuits. In our research, the various forms of sequential reversible circuits such as D, T, SR and JK flip-flops are investigated based on carbon nanotube field-effect transistors. All reversible flip-flops are simulated in two voltages, 0.3 and 0.5 Volt. Our results show t...
متن کاملA numerical device simulator for nanoscale carbon nanotube transistors
An efficient and reliable numerical simulator for carbon nanotube field effect transistors suitable for device optimization and compact model development is presented. The simulator is based on a Schrödinger-Poisson solver and an efficient adaptive integration scheme for the charge and the current along the nanotube. While suitable error estimators for adaptive integration are studied extensive...
متن کامل